DRAM 64k x 1

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Cross-Reference
BRAND TAG NUMBER PIN COUNT OUTPUT MARKINGS
Micron MI 4264 MT4264
Mitsubishi M5K 4164 DIP16 ZIP16 TS M5K4164AL M5K4164ANP
National Semiconductor NMC 3764 NMC3764
National Semiconductor NMC 4164 NMC4164
NEC uPD 4164 uPD4164C uPD4164D
NEC uPD 4265 DIP16 TS uPD4265C
OKI MSM 3764 MSM3764 MSM3764A
Samsung KM 4164 KM4164
Texas Instruments TMS 4164 DIP16 LCC18 TS TMS4164
Toshiba TMM 4164 TMM4164AP TMM4164C TMM4164P
Note:
  • 64= Page mode
  • 65= Automatic pulse refresh

Dynamic Random-Access Memory 64K x 1 (DIP16, 300mil)(LCC18, 330mil)

Contents

Size

bit Byte (padded 0000000x) Byte (unpadded) Hex
64Kb 64KB 8KB 10000hex

Pinout

DIP16 (*64 Page mode)				DIP16 (*65 Automatic pulse refresh)
     +--\/--+					      +--\/--+
  NC |1   16| GND				*RFSH |1   16| GND
 Din |2   15| *CAS				  Din |2   15| *CAS
 *WE |3   14| Dout				  *WE |3   14| Dout
*RAS |4   13| A6				 *RAS |4   13| A6
  A0 |5   12| A3				   A0 |5   12| A3
  A2 |6   11| A4				   A2 |6   11| A4
  A1 |7   10| A5				   A1 |7   10| A5
 Vcc |8    9| A7				  Vcc |8    9| A7
     +------+					      +------+

LCC18
+---------------------------------------------------------------+
|  3 *WE        |  8 A1         | 12 A4         | 17 *CAS       |
|  4 *RAS       |  9 Vdd        | 13 A3         | 18 Vss        |
|  5 NC         | 10 A7         | 14 NC         |  1 NC         |
|  6 A0         | 11 A5         | 15 A6         |  2 Din        |
|  7 A2         |               | 16 Dout       |               |
+---------------------------------------------------------------+

     ZIP16
          ^
    A6  1 |
          |  2 Dout
  *CAS  3 |
          |  4 GND
  *REF  5 |
          |  6 Din
    *W  7 |
          |  8 *RAS
    A0  9 |
          | 10 A2
    A1 11 |
          | 12 Vcc
    A7 13 |
          | 14 A4
    A4 15 |
          | 16 A3
          -

External links

DRAM page on wikipedia

Files

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